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| (R) 2N720A EPITAXIAL PLANAR NPN s HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N790A is a silicon Planar Epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Total Dissipation at T amb 25 o C at T C 25 o C Storage Temperature Max. Operating Junction Temperature Value 120 80 7 500 0.5 1.8 -55 to 175 175 Unit V V V mA W W o o C C December 2002 1/4 2N720A THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 83.3 300 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CBO V (BR)CBO Parameter Collector Cut-off Current (I E = 0) Collector-Base Breakdown Voltage (I E = 0) Test Conditions V CB = 90 V I C = 100 A 120 Min. Typ. Max. 10 Unit nA V V (BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Emitter Cut-off Current (I E = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = 30 mA 80 V I E = 100 A 7 V I EBO V CE(sat) V BE(sat) h FE V EB = 5 V I C = 50 mA I C = 150 mA I C = 50 mA I C = 150 mA I C = 100 A I C = 10 mA I C = 150 mA I C = 50 mA f = 20 MHz IE = 0 IC = 0 I B = 5 mA I B = 15 mA I B = 5 mA I B = 15 mA V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V f = 1 MHz f = 1 MHz 20 35 40 2.5 10 1.2 5 0.9 1.3 nA V V V V 120 hfe C CBO C EBO Small Signal Current Gain Collector-Base Capacitance Emitter-Base Capacitance VCB = 10 V V EB = 0.5 V 15 85 pF pF Pulsed: Pulse duration = 300 s, duty cycle 1 % 2/4 2N720A TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch G I H E F D A L C B 0016043 3/4 2N720A Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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